Solar projection street light tips:

GaAs is doped with nAs to form a mixed crystal, but the common As atom (purple) cannot be replaced. If the In component is increased, a part of the Ga atoms (yellow) will be replaced by 1n atoms (light blue).

In order to form a series structure, semiconductor bodies having different band gaps must be stacked. A method of joining crystal structures like this and growing them in a single product is called epitaxial growth. If the character cannot be connected, dislocations will occur near the upper film interface, resulting in reduced performance.

Since the epitaxial growth method is required to be performed on a high-precision electronic device manufacturing apparatus such as MBE (molecular beam epitaxy) and MOVPE (metal organic chemical vapor phase epitaxy), it is difficult to mass-produce. High cost.